technical data pnp switching silicon transistor qualified per mil - prf - 19500/350 devices qualified level 2N3867 2N3867s 2n3868 2n3868s jan jantx jantxv maximum ratings ratings symbol 2n386 7 2N3867 s 2n386 8 2n3868 s unit collector - emitte r voltage v ceo 40 60 vdc collector - base voltage v cbo 40 60 vdc emitter - base voltage v ebo 4.0 vdc collector current -- continuous i c 3.0 adc total power dissipation @ t a = 25 0 c (1) @ t c = 25 0 c (2) p t 1.0 10 w w operating & storage temperature range t op, t st g - 55 to +200 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc 17.5 0 c/w 1) derate linearly 5.71 mw/ 0 c for t a > +25 0 c 2) derate linearly 57.1 mw/ 0 c for t c > +25 0 c *see appendix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - base breakdown voltage i c = 100 m adc 2N3867, s 2n3868, s v (br) c bo 40 60 vdc collector - emitter breakdown voltage i c = 20 madc 2N3867, s 2n3868, s v (br) ceo 40 60 vdc emitter - base breakdown voltage i e = 100 m adc v (br) ebo 4.0 vdc collector - emitter cutoff current v eb = 2.0 vdc, v ce = 40 vdc 2N3867, s v eb = 2.0 vdc, v ce = 60 vdc 2n3868, s i cex 1.0 1.0 m adc collector - base cutoff current v cb = 40 vdc 2N3867, s v cb = 60 vdc 2n3868, s i cbo 10 0 m adc emitter - base cutoff current v eb = 4 vdc i ebo 100 m adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2 to - 5* 2N3867, 2n3868 to - 39* (to - 205ad) 2N3867s, 2n3868s
2N3867, s; 2n3868, s jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (3) forward - current transfer ratio i c = 500 madc, v ce = 1.0 vdc 2N3867, s 2n3868, s i c = 1.5 adc, v ce = 2.0 vdc 2N3867, s 2n3868, s i c = 2.5 adc, v ce = 3.0 vdc 2N3867, s 2n3868, s i c = 3.0 adc, v ce = 5.0 vdc all types h fe 50 35 40 30 25 20 20 200 150 collector - emitter saturation voltage i c = 500 madc, i b = 50 madc i c = 1.5 adc, i b = 150 madc i c = 2.5 adc, i b = 250 madc v ce(sat ) 0.5 0.75 1.5 vdc base - emitter saturation voltage i c = 500 madc, i b = 50 madc i c = 1.5 adc, i b = 150 madc i c = 2.5 adc, i b = 250 madc v be(sat) 0.9 1.0 1.4 2.0 vdc dynamic characteristics magnitude of common emitter small - signal short ci rcuit forward current transfer ratio i c = 100 madc, v ce = 5.0 vdc, f = 20 mhz ? h fe ? 3.0 12 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 120 pf input capacitance v eb = 3.0 vdc, i c = 0, 100 khz f 1.0 mhz c ibo 800 pf switching characteristics delay time v cc = - 30 vdc, v eb = 0, t d 35 h s rise time i c = 1.5 adc, i b1 = 150 madc t r 65 h s storage time v cc = - 30 vdc, v eb = 0, t s 500 h s fall time i c = 1.5adc, i b1 = i b2 = 150 madc t f 100 h s turn - on time v cc = 30, i c = 1.5 adc, i b = 150 madc t on 100 h s turn - off time v cc = 30, i c = 1.5 adc, i b = 150 madc t off 600 h s safe operating area dc tests t c = 25 0 c, 1 cycle, t = 1.0 s test 1 v ce = 3.33 vdc, i c = 3.0 adc test 2 v ce = 40 vdc, i c = 160 madc 2N3867, s v ce = 60 vdc, i c = 80 madc 2n3868, s (3) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
|
